| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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19,088 pcs
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19088 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Vishay Dale, part number SI7818DN-T1-E3, is designed for primary side switching circuits. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current of 2.2A at 25°C ambient temperature.
The MOSFET offers a low on-resistance (Rds On) of 135mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 3.4A. It also has a gate charge (Qg) of 30nC at 10V. The device operates within a junction temperature range of -55°C to 150°C.
Packaged in a PowerPAK® 1212-8, this component is designed for surface mounting. Its thermal characteristics include a junction-to-ambient thermal resistance of 33°C/W and a junction-to-case thermal resistance of 2.4°C/W.
The SI7818DN-T1-E3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 150V.
The continuous drain current is 2.2A at 25°C ambient temperature.
The maximum on-resistance is 135mOhm at 3.4A and 10V gate drive.
It is available in a PowerPAK 1212-8 surface-mount package.
The operating junction and storage temperature range is -55°C to 150°C.
The maximum power dissipation is 1.5W at 25°C ambient temperature.