| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The SI7812DN-T1-E3 is an N-Channel MOSFET manufactured by Vishay Dale. It features a maximum drain-to-source voltage of 75V and a continuous drain current of 16A. The device has a maximum on-resistance of 37mOhm at 7.2A and 10V gate drive. Power dissipation is rated at 3.8W at ambient temperature and 52W at case temperature. The gate charge is 24nC at 10V, and input capacitance is 840pF at 35V drain-source voltage. This MOSFET is housed in a PPAK1212-8 surface-mount package, suitable for automated assembly. Typical applications include power management circuits, DC-DC converters, and motor control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75V.
16A.
37mOhm at 7.2A and 10V.
24nC at 10V.
3.8W at ambient temperature and 52W at case temperature.
PPAK1212-8.
840pF at 35V.