SI7810DN-T1-GE3 The Vishay Dale SI7810DN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage rating and a continuous drain current of 3.4A. It is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SI7810DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7810DN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage rating and a continuous drain current of 3.4A. It is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 158 pcs
$ Price Range: $0.99

SI7810DN-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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158 pcs
158 pcs On Request 1 On Request On Request 09+ On Request On Request

SI7810DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7810DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7810DN-T1-GE3 is an N-Channel MOSFET designed for various applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 3.4A at 25°C ambient temperature. The on-state resistance (Rds On) is specified as a maximum of 62mOhm at a gate-source voltage of 10V and a drain current of 5.4A.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It utilizes TrenchFET® technology and comes in a compact PowerPAK® 1212-8 surface-mount package with a low profile. The device is suitable for applications requiring efficient switching and power management.

 

Key electrical characteristics include a gate threshold voltage of 4.5V (max) at 250µA and a gate charge of 17nC at 10V. The component also offers fast switching times, with a turn-on delay of 10ns and a turn-off delay of 20ns, along with a fall time of 15ns. The maximum power dissipation is rated at 1.5W at 25°C ambient temperature.

SI7810DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SI7810DN-T1-GE3 N-Channel 100V PowerPAK 1212-8 MOSFET
Subcategory: N-Channel

SI7810DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7810DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7810DN-T1-GE3 Features

  • 100V drain-source voltage rating.
  • 3.4A continuous drain current.
  • Low 62mOhm on-state resistance.
  • Compact PowerPAK 1212-8 package.
  • Fast switching times.

SI7810DN-T1-GE3 Applications

  • Primary side switch in power supplies.
  • In-rush current limiter for DC circuits.
  • PWM optimized for switching regulators.

SI7810DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7810DN-T1-GE3?

The maximum drain-source voltage is 100V.

What is the continuous drain current of the SI7810DN-T1-GE3?

The continuous drain current is 3.4A at 25°C ambient temperature.

What is the on-state resistance (Rds On) for this MOSFET?

The Rds On is a maximum of 62mOhm at a drain current of 5.4A and a gate-source voltage of 10V.

What is the operating temperature range for the SI7810DN-T1-GE3?

The operating temperature range is -55°C to 150°C.

What type of package does the SI7810DN-T1-GE3 use?

It uses the PowerPAK 1212-8 surface-mount package.

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