| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150,667 pcs
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150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SI7810DN-T1-E3 is an N-Channel MOSFET designed for primary side switching and in-rush current limiting applications. It offers a high drain-source voltage of 100V and a maximum continuous drain current of 3.4A at 25°C.
Key electrical characteristics include a low on-state resistance (Rds On) of 62mOhm at a gate-source voltage of 10V and a drain current of 5.4A. The gate threshold voltage is 4.5V at 250µA, and the gate charge is 17nC at 10V.
This MOSFET is housed in a PowerPAK 1212-8 package, a surface-mount solution with a low profile of 1.07 mm. The operating temperature range is -55°C to 150°C (TJ). It is suitable for applications requiring efficient power switching and control.
The device is RoHS3 compliant and has an MSL 1 rating. The datasheet also mentions a halogen-free option is available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
It comes in a PowerPAK 1212-8 surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4.5V at 250µA drain current.
The maximum on-resistance is 62mOhm at VGS=10V and ID=5.4A.
The maximum total gate charge is 17nC at VGS=10V.
The maximum power dissipation is 1.5W at 25°C ambient temperature.