| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,296 pcs
|
3296 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Height | |
| Length | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Width |
The Vishay SI7806ADN-T1-E3 is an N-Channel MOSFET designed for power applications. It offers a drain-source breakdown voltage of 30V and can handle a continuous drain current of 9A. The MOSFET exhibits a low on-resistance (Rds On) of 11mOhm when tested at 14A and 10V gate-source voltage, indicating efficient power transfer.
This component operates within a temperature range of -55°C to 150°C. It is housed in a surface-mount PowerPAK 1212-8 package, suitable for compact electronic designs. The technology used is MOSFET, specifically utilizing Vishay's TrenchFET/PowerPAK technology for enhanced performance.
Key electrical characteristics include a gate-source breakdown voltage of ±20V and a gate charge of 20 nC at 5V. The power dissipation is rated at 1.5W. The device is configured as a single N-channel MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The continuous drain current is 9A.
The Rds On is a maximum of 11mOhm at 14A and 10V.
The operating temperature range is -55°C to 150°C.
It is in a Surface Mount PowerPAK 1212-8 package.
The gate charge is 20 nC at 5V.