| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,267 pcs
|
60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7804DN-T1-E3 from Vishay Dale is a single N-Channel MOSFET utilizing Metal Oxide Semiconductor (MOSFET) technology. It is rated for a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 6.5A at 25°C.
Key electrical characteristics include a maximum Rds On of 18.5mOhm at 10A and 10V, a gate charge (Qg) of 13nC at 5V, and a gate-source threshold voltage (Vgs(th)) of 1.8V at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a PowerPAK® 1212-8 package, designed for surface mounting. Its maximum power dissipation is 1.5W (Ta). The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI7804DN-T1-E3 is 30V.
The continuous drain current (Id) at 25°C is 6.5A.
The maximum Rds On is 18.5mOhm at 10A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The SI7804DN-T1-E3 is supplied in a PowerPAK® 1212-8 package for surface mounting.