| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,120 pcs
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1120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
This Vishay Siliconix SI7802DN-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage of 250V and a continuous drain current of 1.24A at 25°C.
The MOSFET operates with drive voltages between 6V and 10V, and has a maximum Rds On of 435mOhm at 1.95A and 10V. The gate threshold voltage is a maximum of 3.6V at 250µA, and the gate charge is a maximum of 21 nC at 10V. The maximum gate-source voltage is ±20V.
With a maximum power dissipation of 1.5W at 25°C, this component is suitable for applications requiring moderate power handling. It operates within a temperature range of -55°C to 150°C.
The SI7802DN-T1-E3 is housed in a surface mount PowerPAK® 1212-8 package, facilitating integration into compact circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 250V.
The continuous drain current is 1.24A at 25°C.
The maximum Rds On is 435mOhm at 1.95A and 10V.
The operating temperature range is -55°C to 150°C.
The SI7802DN-T1-E3 is in a PowerPAK® 1212-8 surface mount package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.