| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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213 pcs
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213 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Halogen Free | |
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The Vishay Dale Si7794DP-T1-GE3 is an N-Channel Power MOSFET designed for low-side applications in V core, system, and memory power supplies, commonly found in notebook PCs. It features a 30V drain-source voltage and a maximum continuous drain current of 60A at 25°C case temperature.
This MOSFET offers a low on-resistance of 3.4mOhm at 20A and 10V gate-source voltage, with a gate charge of 72nC at 10V. It integrates a Schottky diode, enhancing its performance. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a surface-mount PowerPAK SO-8, the Si7794DP-T1-GE3 is suitable for compact designs. It boasts a maximum power dissipation of 48W at 25°C case temperature and 5W at 25°C ambient temperature. The MOSFET is also halogen-free and lead-free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAK SO-8 surface mount package.
-55°C to 150°C.
3.4mOhm at 10V gate drive, 4.2mOhm at 4.5V.
Yes, it features a Schottky diode body.
2.5V at 250µA.
48W at case temperature 25°C, 5W at ambient.