| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
213 pcs
|
213 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7792DP-T1-GE3 is a high-performance N-Channel MOSFET designed for various applications. It features a drain-source voltage (Vds) of 30V and can handle a continuous drain current of up to 40.6A when measured at ambient temperature (Ta) and 60A when measured at case temperature (Tc).
This MOSFET boasts a low on-resistance (Rds On) of 2.1mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer. It includes an integrated Schottky Diode, enhancing its functionality. The device operates within a temperature range of -55°C to 150°C (TJ) and is packaged in a surface-mount PowerPAK SO-8 configuration.
Key electrical characteristics include a gate charge (Qg) of 135 nC at 10V and an input capacitance (Ciss) of 4735 pF at 15V. The maximum power dissipation is rated at 6.25W (Ta) and 104W (Tc). The SI7792DP-T1-GE3 is compliant with RoHS3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI7792DP-T1-GE3 is 30V.
The maximum continuous drain current is 40.6A at Ta=25°C and 60A at Tc=25°C.
The SI7792DP-T1-GE3 is supplied in a PowerPAK SO-8 package.
The operating junction temperature range is -55°C to 150°C.
Yes, the SI7792DP-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.