SI7790DP-T1-GE3 The Vishay Dale SI7790DP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 50A continuous drain current. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7790DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7790DP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 50A continuous drain current. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 3,734 pcs
$ Price Range: $0.99

SI7790DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,359 pcs
2359 pcs On Request 1 On Request On Request 16+ On Request On Request
Non-Authorised Inventory information
1,375 pcs
1375 pcs On Request 1 On Request On Request On Request On Request On Request

SI7790DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7790DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7790DP-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 50A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds On) of 4.5mOhm at 15A and 10V Vgs, and a typical on-resistance of 6mOhm at 4.5V Vgs. The gate charge (Qg) is 95nC maximum at 10V Vgs, and input capacitance (Ciss) is 4200pF maximum at 20V Vds.

 

With a maximum power dissipation of 69W at 25°C case temperature and 5.2W at 25°C ambient temperature, it is suitable for demanding applications. The operating temperature range is -55°C to 150°C (TJ).

 

The device is packaged in a Surface Mount PowerPAK SO-8. It is RoHS3 compliant and Halogen-free.

SI7790DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7790DP-T1-GE3 N-Channel 40V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SI7790DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7790DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7790DP-T1-GE3 Features

  • 40V drain-source breakdown voltage.
  • 50A continuous drain current.
  • Low 4.5mOhm on-resistance.
  • PowerPAK SO-8 surface mount package.
  • Halogen-free and RoHS3 compliant.

SI7790DP-T1-GE3 Applications

  • Suitable for DC/DC converters.
  • Ideal for power switching applications.
  • Used in power management circuits.

SI7790DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI7790DP-T1-GE3?

The drain-source breakdown voltage is 40V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 50A.

What is the on-resistance of the SI7790DP-T1-GE3 at 10V Vgs?

The on-resistance is 4.5mOhm at 15A and 10V Vgs.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI7790DP-T1-GE3 in?

It is in a PowerPAK SO-8 surface mount package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SI7790DP-T1-GE3 Halogen-free?

Yes, it is Halogen-free.

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