| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7772DP-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage (Vds) and a maximum continuous drain current of 35.6A at 25°C case temperature.
This MOSFET utilizes TrenchFET Gen III technology and includes an integrated Schottky diode. It offers a low on-resistance (Rds(on)) of 0.013Ω at 15A and 10V gate-source voltage, making it suitable for efficient power switching.
The device is packaged in a PowerPAK SO-8 surface-mount package. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 8.3 nC typical and an input capacitance (Ciss) of 1084 pF maximum.
Applications include notebook system power, particularly for low-side switching. The component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
It is available in a PowerPAK SO-8 surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The typical on-resistance is 13mΩ at 10V gate voltage and 15A drain current.
The maximum continuous drain current is 35.6A at Tc=25°C.
Yes, it features a single configuration with an integrated Schottky diode (SkyFET).
The maximum power dissipation is 29.8W at Tc=25°C.