| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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14,600 pcs
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14600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7758DP-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 30V and can handle a continuous drain current of up to 60A at the case temperature.
Key electrical characteristics include a low on-resistance of 2.9mOhm at 20A and 10V gate-source voltage, and a maximum gate charge of 160nC at 10V. The device also incorporates a Schottky diode.
This MOSFET is suitable for surface mounting and comes in a PowerPAK SO-8 package. It operates within a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and halogen-free.
Applications include notebook CPU core, buck converters, and synchronous rectification switches.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
60A at case temperature 25°C, or 34.6A at ambient temperature 25°C.
Maximum 2.9 mOhm at 20A drain current.
Maximum 2.7V at 250µA drain current.
PowerPAK SO-8 surface mount package.
-55°C to +150°C.
104W at case temperature 25°C, or 6.25W at ambient temperature 25°C.