SI7738DP-T1-GE3 The Vishay Dale SI7738DP-T1-GE3 is an N-Channel MOSFET designed for primary side switching applications. It offers a 150V drain-source voltage and a continuous drain current of 30A.
Mfr Part #:

SI7738DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7738DP-T1-GE3 is an N-Channel MOSFET designed for primary side switching applications. It offers a 150V drain-source voltage and a continuous drain current of 30A.
✓ Total Stock: 47,805 pcs
$ Price Range: $0.99

SI7738DP-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7738DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7738DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7738DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET series, rated for 150V drain-source voltage and 30A continuous drain current at 25°C case temperature. It features a low on-resistance of 38mOhm at 7.7A and 10V gate drive voltage, making it suitable for efficient power switching.

 

This MOSFET is housed in a PowerPAK SO-8 package, designed for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ). The device is also halogen-free, adhering to IEC 61249-2-21 definitions.

 

Key electrical characteristics include an input capacitance of 2100pF at 75V and a gate charge of 53nC at 10V. The maximum power dissipation is 5.4W when mounted on a 1" x 1" FR4 board (Ta) and 96W under case temperature conditions (Tc).

 

Applications include primary side switching. The device is 100% UIS tested, ensuring reliability in demanding applications.

SI7738DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Siliconix Si7738DP N-Channel 150V Power MOSFET
Subcategory: N-Channel

SI7738DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7738DP-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7738DP-T1-GE3 Features

  • N-Channel 150V Power MOSFET
  • 30A continuous drain current
  • Low Rds On: 38mOhm @ 7.7A, 10V
  • PowerPAK SO-8 surface mount package
  • Halogen-free and RoHS3 compliant

SI7738DP-T1-GE3 Applications

  • Used in high-efficiency DC-DC converter circuits.
  • Suitable for power management in industrial systems.
  • Ideal for motor drive and switching applications.
  • Applicable in battery protection and charging circuits.

SI7738DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI7738DP-T1-GE3?

The minimum drain-source breakdown voltage is 150V at VGS = 0V and ID = 250µA.

What is the maximum continuous drain current?

The maximum continuous drain current is 30A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 38mOhm at a gate-source voltage of 10V and drain current of 7.7A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the SI7738DP-T1-GE3 available in?

It is available in a PowerPAK SO-8 surface mount package.

What is the gate threshold voltage?

The typical gate threshold voltage is 2.4V at VDS = VGS and ID = 250µA.

What is the maximum gate charge?

The maximum gate charge is 53nC at a gate-source voltage of 10V.

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