| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,444 pcs
|
1444 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7726DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It is designed for applications such as DC/DC converters, notebooks, and POL systems.
Key electrical specifications include a maximum continuous drain current of 35A (Tc) and a low on-state resistance of 9.5mOhm at 10A and 10V. The gate threshold voltage is 2.6V at 250µA, and the maximum gate-source voltage is ±20V. Input capacitance is rated at 1765pF at 15V, and gate charge is 43nC at 10V.
This MOSFET is housed in a PowerPAK® 1212-8 package, suitable for surface mounting. It operates within a temperature range of -50°C to 150°C (TJ). The device is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
It is built using SkyFET Monolithic TrenchFET Power MOSFET technology and includes a Schottky Diode. The low thermal resistance and small profile of the PowerPAK package make it suitable for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
35A at 25°C case temperature.
9.5mOhm maximum at Vgs=10V and Id=10A.
2.6V maximum at Id=250µA.
43nC at Vgs=10V.
PowerPAK 1212-8 surface-mount package.
-50°C to 150°C (junction).