| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
106,353 pcs
|
106353 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 2015+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7720DN-T1-GE3 is an N-Channel 30V (D-S) MOSFET with a monolithic Schottky diode from Vishay Siliconix. It is part of the SkyFET and TrenchFET series, designed for efficient power management. The device offers a low typical on-resistance of 10 mOhm (12.5 mOhm maximum) at Vgs = 10V and Id = 10A, and 12 mOhm (15 mOhm maximum) at Vgs = 4.5V and Id = 7A. It can handle a continuous drain current of 12A and a pulsed drain current of 50A.
The MOSFET is housed in a compact PowerPAK 1212-8 package with a low 1.07 mm profile, making it suitable for space-constrained applications. It is surface mount and has a maximum power dissipation of 52W at case temperature 25°C. The device is 100% Rg tested and 100% UIS tested for reliability.
Typical applications include notebook PC system power, buck converters, and synchronous rectifier switches. The device has an operating junction temperature range of -50°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-50°C to 150°C (junction).
PowerPAK 1212-8 surface mount package.
30V.
12A at case temperature.
12.5mOhm maximum at 10V gate drive and 10A drain current.
45nC maximum at 10V gate-source voltage.
1790pF maximum at 15V drain-source voltage.