| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,008 pcs
|
12008 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7686DP-T1-GE3 is a single N-Channel MOSFET with a drain-source voltage (Vdss) of 30V. It is designed for surface mount applications and comes in a PowerPAK® SO-8 package.
This MOSFET offers a maximum continuous drain current of 35A (Tc) and a low on-resistance (Rds On) of 9.5mOhm at 13.8A and 10V. The gate-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) of 3V at 250µA. Key electrical characteristics include an input capacitance (Ciss) of 1220 pF at 15V and a gate charge (Qg) of 26 nC at 10V.
Operating within a temperature range of -55°C to 150°C (TJ), the device has a maximum power dissipation of 5W (Ta) or 37.9W (Tc). The technology used is MOSFET (Metal Oxide).
This component is suitable for various power management applications where efficient switching and low on-resistance are critical. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAK SO-8 surface mount package.
-55°C to 150°C junction temperature.
35A at case temperature.
9.5mOhm maximum at 13.8A and 10V gate drive.
3V maximum at 250µA drain current.