SI7682DP-T1-E3 The Vishay Dale SI7682DP-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 20A continuous current. It is housed in a Surface Mount PowerPAK SO-8 package.
Mfr Part #:

SI7682DP-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7682DP-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and 20A continuous current. It is housed in a Surface Mount PowerPAK SO-8 package.
✓ Total Stock: 4,929 pcs
$ Price Range: $0.99

SI7682DP-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,700 pcs
4700 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
229 pcs
229 pcs On Request 1 On Request On Request 09+ On Request On Request

SI7682DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7682DP-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI7682DP-T1-E3 is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vds) of 30V and a continuous drain current (Id) of 20A (Tc). The MOSFET features a low on-resistance (Rds On) of 9mOhm at 20A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 2.5V at 250µA.

 

Key electrical characteristics include an input capacitance (Ciss) of 1595 pF at 15V and a gate charge (Qg) of 38 nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 5W (Ta) or 27.5W (Tc).

 

The MOSFET is packaged in a PowerPAK® SO-8 format, suitable for surface mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.

SI7682DP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7682DP-T1-E3 N-Channel MOSFET
Subcategory: MOSFET

SI7682DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7682DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7682DP-T1-E3 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 20A continuous drain current capability.
  • Low 9mOhm maximum on-resistance.
  • Surface mount PowerPAK SO-8 package.
  • Wide operating temperature range.

SI7682DP-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for high current density designs.
  • Used in power management circuits.
  • Efficient for voltage regulation tasks.

SI7682DP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI7682DP-T1-E3?

The drain-to-source voltage (Vds) for the SI7682DP-T1-E3 is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 20A (Tc).

What is the Rds On at 20A and 10V Vgs?

The Rds On (Max) is 9mOhm at 20A, 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI7682DP-T1-E3 in?

The SI7682DP-T1-E3 is in a PowerPAK® SO-8 package.

How is the SI7682DP-T1-E3 mounted?

The SI7682DP-T1-E3 is a surface mount device.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

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