| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,935 pcs
|
2935 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Vishay Dale, part number SI7668ADP-T1-GE3, is designed for efficient power switching applications. It offers a 30V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C case temperature.
The MOSFET exhibits a low on-state resistance (Rds On) of 3mΩ at 25A drain current and 10V gate-source voltage, and 3.4mΩ at 22A and 4.5V gate-source voltage. With a maximum gate charge of 170nC at 10V, it is suitable for DC/DC conversion applications in notebooks, servers, and VRM modules.
Packaged in a PowerPAK SO-8 surface-mount package, this device operates within a temperature range of -55°C to 150°C. It features a maximum power dissipation of 83W at 25°C case temperature and 5.4W at 25°C ambient temperature.
The SI7668ADP-T1-GE3 is built using TrenchFET® technology and is halogen-free, meeting IEC 61249-2-21 standards. It is 100% R g tested for reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (junction temperature).
PowerPAK SO-8 surface mount package.
30V minimum.
1.8V maximum at 250µA.
3mΩ maximum at 25A drain current and 10V gate drive.
40A at case temperature 25°C.
170nC maximum at 10V gate drive.