SI7658ADP-T1-GE3 The Vishay Dale SI7658ADP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 60A continuous drain current. It features a low RdsOn of 2.2mOhm at 10V gate-source voltage.
Mfr Part #:

SI7658ADP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7658ADP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 60A continuous drain current. It features a low RdsOn of 2.2mOhm at 10V gate-source voltage.
✓ Total Stock: 30,130 pcs
$ Price Range: $0.99

SI7658ADP-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request 1045 On Request On Request
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request
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30 pcs
30 pcs On Request 1 On Request On Request On Request On Request On Request

SI7658ADP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7658ADP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7658ADP-T1-GE3 is a TrenchFET Gen III power MOSFET designed for applications such as low-side switching in DC/DC converters, servers, POL, and VRM.

 

This N-Channel MOSFET offers a 30V drain-source voltage and a continuous drain current of up to 60A. Its key electrical characteristics include a maximum RdsOn of 2.2mOhm at Vgs = 10V and 4.5V, and a gate charge of 34nC typical.

 

The device is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The MOSFET is 100% Rg tested and 100% avalanche tested, indicating robust performance and reliability.

SI7658ADP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7658ADP-T1-GE3 N-Channel 30V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SI7658ADP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI7658ADP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7658ADP-T1-GE3 Features

  • N-Channel 30V Power MOSFET.
  • Low RdsOn: 2.2mOhm max at 10V.
  • High continuous drain current: 60A.
  • PowerPAK SO-8 surface mount package.
  • TrenchFET Gen III technology.

SI7658ADP-T1-GE3 Applications

  • Low-side switch for DC/DC converters.
  • Suitable for server power supplies.
  • Used in Point-of-Load (POL) systems.
  • Applicable in Voltage Regulator Modules (VRM).

SI7658ADP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7658ADP-T1-GE3?

The maximum drain-source voltage is 30V.

What is the typical gate charge for the SI7658ADP-T1-GE3?

The typical gate charge is 34nC at 10V gate-source voltage.

What is the maximum on-resistance of the SI7658ADP-T1-GE3?

The maximum on-resistance is 2.2mOhm at a drain current of 20A and gate-source voltage of 10V.

What is the continuous drain current rating for the SI7658ADP-T1-GE3?

The continuous drain current is 60A at 25°C case temperature.

What is the operating temperature range for the SI7658ADP-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7658ADP-T1-GE3 supplied in?

The SI7658ADP-T1-GE3 is supplied in a PowerPAK SO-8 package.

Is the SI7658ADP-T1-GE3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

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