SI7655DN-T1-GE3 The Vishay Dale SI7655DN-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 40A continuous current rating. It is housed in a PowerPAK 1212-8S package.
Mfr Part #:

SI7655DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7655DN-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 40A continuous current rating. It is housed in a PowerPAK 1212-8S package.
✓ Total Stock: 61 pcs
$ Price Range: $0.99

SI7655DN-T1-GE3 Available from 1 distributor

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SI7655DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7655DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale Si7655DN is a P-Channel TrenchFET Power MOSFET designed for applications such as smart phones, tablet PCs, and mobile computing. It features a low thermal resistance and a PowerPAK package with a low profile of 0.75 mm.

 

Key electrical specifications include a Drain-Source Voltage (Vds) of 20V and a maximum continuous drain current of 40A at 25°C case temperature. The on-resistance (Rds On) is as low as 3.6 mOhm at 20A and 10V Vgs. The gate charge (Qg) is typically 72 nC at 10V Vgs.

 

This MOSFET is suitable for load switch and battery switch applications. It operates over a temperature range of -50°C to 150°C (TJ) and is available in a surface mount PowerPAK 1212-8S package.

 

The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI7655DN-T1-GE3 Quick Information

Product Type: MOSFET
Series: SI7655DN-T1-GE3
Canonical Name: Vishay Siliconix Si7655DN P-Channel 20 V MOSFET
Subcategory: P-Channel

SI7655DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7655DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7655DN-T1-GE3 Features

  • P-Channel TrenchFET Power MOSFET.
  • 20V Drain-Source Voltage rating.
  • Low Rds On: 3.6mOhm at 20A, 10V.
  • 40A continuous drain current.
  • Compact PowerPAK 1212-8S package.

SI7655DN-T1-GE3 Applications

  • Ideal for battery switch applications.
  • Suitable for load switch functions.
  • Used in mobile computing devices.
  • Applicable for smart phones.
  • Designed for tablet PCs.

SI7655DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage (Vds) for the SI7655DN-T1-GE3?

The Drain-Source Voltage (Vds) is 20V.

What is the maximum continuous drain current for the SI7655DN-T1-GE3?

The maximum continuous drain current is 40A at 25°C case temperature.

What is the on-resistance (Rds On) of the SI7655DN-T1-GE3?

The on-resistance is a maximum of 3.6mOhm at 20A drain current and 10V gate-source voltage.

What is the package type for the SI7655DN-T1-GE3?

The package type is PowerPAK 1212-8S.

What is the operating temperature range for the SI7655DN-T1-GE3?

The operating temperature range is -50°C to 150°C (TJ).

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