| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,895 pcs
|
3895 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Halogen Free | |
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The SI7636DP-T1-E3 is a high-density N-channel power MOSFET manufactured by Vishay Dale using advanced TrenchFET Gen II technology. Engineered for efficiency, this component features an ultra-low on-resistance of 4mΩ at a 10V gate drive and 4.8mΩ at 4.5V, making it ideal for minimizing conduction losses in power delivery networks. It supports a continuous drain current of 17A at 25°C ambient temperature and can handle pulsed currents up to 60A.
Designed primarily for low-side DC/DC conversion in notebooks, servers, and workstations, the device also serves effectively as a synchronous rectifier in point-of-load (POL) applications. The gate threshold voltage ranges from 1.0V to 3.0V at 250µA, ensuring reliable switching performance. With a maximum junction-to-case thermal resistance of 1.8°C/W and a junction temperature range of -55°C to 150°C, the MOSFET maintains robust thermal management under demanding conditions.
Housed in a compact, leadless PowerPAK SO-8 package measuring 6.15mm by 5.15mm with a low profile of 1.07mm, the SI7636DP-T1-E3 optimizes board space while providing excellent thermal dissipation. The exposed copper terminals facilitate efficient heat transfer to the PCB. This component is lead-free and halogen-free, complying with international environmental standards for modern electronics manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAK SO-8 surface mount package.
-55°C to 150°C.
17 A at TA = 25°C.
4 mΩ maximum at VGS=10V, ID=25A.
Yes, the device is lead-free and halogen-free per the datasheet.