SI7634BDP-T1-GE3 The Vishay Dale SI7634BDP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7634BDP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7634BDP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 2,183 pcs
$ Price Range: $0.99

SI7634BDP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,750 pcs
1750 pcs On Request 1 On Request On Request 1748+ On Request On Request
Non-Authorised Inventory information
433 pcs
433 pcs On Request 1 On Request On Request 10+ On Request On Request

SI7634BDP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7634BDP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7634BDP-T1-GE3 is a high-performance N-Channel MOSFET designed for various applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 40A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds On) of 5.4mOhm at 15A and 10V gate-source voltage, ensuring efficient power delivery. The gate-source voltage threshold (Vgs(th)) is 2.6V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).

 

The device is built using TrenchFET® power MOSFET technology and is packaged in a PowerPAK® SO-8 surface-mount package. This package type is suitable for automated assembly processes. The MOSFET is rated for a maximum power dissipation of 48W at 25°C case temperature and 5W at 25°C ambient temperature.

 

Key electrical characteristics include an input capacitance (Ciss) of 3150pF at 15V and a gate charge (Qg) of 68nC at 10V. The rise time is typically 10-12 ns, and the fall time is 8-12 ns, with a turn-off delay time of 34 ns.

SI7634BDP-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si7
Canonical Name: Vishay Dale SI7634BDP-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI7634BDP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7634BDP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7634BDP-T1-GE3 Features

  • N-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 40A continuous drain current.
  • Low 5.4mOhm on-resistance.
  • PowerPAK SO-8 surface-mount package.

SI7634BDP-T1-GE3 Applications

  • DC-DC converter power switching.
  • Load switch in portable electronics.
  • Battery protection circuits.
  • Low-voltage motor control.

SI7634BDP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SI7634BDP-T1-GE3?

The drain-source voltage (Vds) is 30V.

What is the continuous drain current for the SI7634BDP-T1-GE3?

The continuous drain current is 40A at 25°C case temperature and 22.5A at 25°C ambient temperature.

What is the maximum on-resistance of the SI7634BDP-T1-GE3?

The maximum on-resistance is 5.4mOhm at 15A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 150°C.

What package type is the SI7634BDP-T1-GE3 in?

It is in a PowerPAK SO-8 surface-mount package.

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