| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,256 pcs
|
8256 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7634BDP-T1-E3 is a single N-channel enhancement mode MOSFET manufactured by Vishay Dale. Designed for high-efficiency power switching applications, this device supports a maximum drain-source voltage of 30V and delivers a continuous drain current of 40A at case temperature or 22.5A at ambient temperature.
Engineered for low conduction losses, the MOSFET exhibits a typical on-resistance of 5.4mΩ at 10V gate drive and 15A drain current. The gate charge is specified at 68nC maximum, facilitating fast switching speeds in power supply and motor control circuits. Input capacitance measures 3150pF at 15V drain-source voltage.
Thermal performance is optimized for demanding environments, with a maximum power dissipation of 48W at case temperature and 5W at ambient temperature. The component operates reliably across a junction temperature range of -55°C to +150°C. It is housed in a PPAK SO-8 surface-mount package, suitable for automated PCB assembly and space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V
40 A at case temperature or 22.5 A at ambient temperature
PPAK SO-8 surface-mount package
-55°C to +150°C junction temperature
±20 V
5.4 mΩ at 10V gate drive and 15A drain current