SI7633DP-T1-GE3 P-Channel MOSFET rated for -20V drain-source voltage and -60A continuous drain current. Features ultra-low Rds(on) of 3.3mOhm at 10V gate drive.
Mfr Part #:

SI7633DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET rated for -20V drain-source voltage and -60A continuous drain current. Features ultra-low Rds(on) of 3.3mOhm at 10V gate drive.
✓ Total Stock: 810 pcs
$ Price Range: $0.99

SI7633DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
405 pcs
405 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
405 pcs
405 pcs On Request 1 On Request On Request On Request On Request On Request

SI7633DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7633DP-T1-GE3 Description

Short technical summary and product information.

The SI7633DP-T1-GE3 is a P-Channel TrenchFET power MOSFET from Vishay Siliconix, designed for high-efficiency power switching. It features a drain-source voltage rating of -20V and a continuous drain current of -60A at case temperature 25°C. The device achieves an ultra-low on-resistance of 3.3 mΩ maximum at VGS = -10V, minimizing conduction losses.

 

This MOSFET is offered in the compact PowerPAK SO-8 surface mount package, which provides excellent thermal performance. The junction-to-case thermal resistance is typically 0.9°C/W, enabling power dissipation up to 104W at Tc=25°C. The gate charge is typically 85 nC, allowing fast switching.

 

Typical applications include adapter switch circuits, load switching, and other high-efficiency power management systems. The device is 100% UIS tested and is suitable for automated surface mount assembly.

SI7633DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: SI7633DP-T1-GE3 P-Channel 20V MOSFET
Subcategory: Single MOSFET

SI7633DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7633DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7633DP-T1-GE3 Features

  • TrenchFET power MOSFET technology.
  • Ultra-low 3.3mOhm Rds(on) at 10V.
  • Rated for -20V drain-source voltage.
  • Continuous drain current of -60A.
  • Surface mount PowerPAK SO-8 package.

SI7633DP-T1-GE3 Applications

  • Adapter switch applications.
  • High-efficiency power management circuits.
  • Load switching in portable devices.
  • Battery protection circuits.

SI7633DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI7633DP-T1-GE3?

The maximum drain-source voltage is -20V (P-Channel).

What is the continuous drain current rating?

The continuous drain current is -60A at case temperature 25°C and -34A at ambient temperature 25°C.

What is the on-resistance of this MOSFET?

The typical on-resistance is 3.3mΩ at VGS=-10V and ID=20A.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +150°C.

What package is the SI7633DP-T1-GE3 available in?

It is available in a PowerPAK SO-8 surface mount package.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at ID=250µA.

What is the input capacitance?

The maximum input capacitance is 9500pF at VDS=-10V.

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