| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SI7629DN-T1-GE3 is a P-Channel Power MOSFET from the TrenchFET® Gen III family. It is designed for applications requiring efficient switching and low on-resistance.
Key electrical specifications include a Drain-Source Voltage (Vds) of 20V and a maximum continuous drain current of 35A at 25°C case temperature. The on-resistance (Rds(on)) is as low as 4.6mOhm at a Vgs of 10V and Id of 20A. The gate charge (Qg) is typically 59 nC at 10V Vgs.
This MOSFET features a PowerPAK® 1212-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is tested for R g and UIS, indicating robust performance characteristics.
Applications for this MOSFET include adaptor switches, battery switches, and load switches where efficient power management is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vds) is 20V.
The maximum continuous drain current is 35A at 25°C case temperature.
The typical on-resistance at Vgs = -10V is 4.6mOhm.
This MOSFET is supplied in the PowerPAK® 1212-8 package.
The operating junction and storage temperature range is -55°C to 150°C.