SI7625DN-T1-GE3 The Vishay Dale SI7625DN-T1-GE3 is a P-Channel MOSFET designed for power applications. It offers a 30V Drain-Source Voltage and a 35A continuous drain current.
Mfr Part #:

SI7625DN-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7625DN-T1-GE3 is a P-Channel MOSFET designed for power applications. It offers a 30V Drain-Source Voltage and a 35A continuous drain current.
✓ Total Stock: 61,287 pcs
$ Price Range: $0.99

SI7625DN-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI7625DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7625DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7625DN-T1-GE3 is a P-Channel MOSFET featuring TrenchFET® technology. It is rated for a maximum Drain-Source Voltage of 30V and a continuous drain current of 35A at 25°C case temperature.

 

Key electrical specifications include a maximum RDS(on) of 7mΩ at 10V VGS and 15A ID. The gate charge (Qg) is typically 39.5nC at 10V. Input capacitance (Ciss) is 4427pF at 15V VDS, and reverse transfer capacitance (Crss) is 430pF.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a PowerPAK® 1212-8 package and is suitable for surface mounting. The device is tested for 100% Rg and UIS.

 

Applications include notebook adapter switches and notebook load switches. The component is RoHS3 compliant and has an MSL rating of 1.

SI7625DN-T1-GE3 Quick Information

Product Type: MOSFET
Series: SI7625DN-T1-GE3
Canonical Name: Vishay Dale SI7625DN-T1-GE3 P-Channel 30V 35A PowerPAK 1212-8 MOSFET
Subcategory: P-Channel

SI7625DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7625DN-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7625DN-T1-GE3 Features

  • P-Channel 30V Power MOSFET.
  • Low RDS(on) of 7mΩ at 10V.
  • 35A continuous drain current.
  • PowerPAK 1212-8 surface mount package.
  • TrenchFET® power MOSFET technology.

SI7625DN-T1-GE3 Applications

  • Used in load switching and power management circuits.
  • Suitable for battery protection and charging applications.
  • Ideal for DC-DC converter and power supply designs.
  • Applied in portable and industrial equipment power rails.

SI7625DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage for the SI7625DN-T1-GE3?

The Drain-Source Voltage is 30V.

What is the maximum continuous drain current for the SI7625DN-T1-GE3?

The maximum continuous drain current is 35A at 25°C case temperature.

What is the typical Gate Charge for the SI7625DN-T1-GE3?

The typical Gate Charge is 39.5nC at 10V VGS.

What is the operating temperature range of the SI7625DN-T1-GE3?

The operating temperature range is -55°C to 150°C.

What package type is the SI7625DN-T1-GE3 MOSFET in?

The SI7625DN-T1-GE3 is in a PowerPAK 1212-8 package.

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