BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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60,267 pcs
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60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI7625DN is a P-Channel Vertical DMOS MOSFET manufactured by Vishay Dale. It is designed for both linear and switching applications and operates within a temperature range of -55 °C to +125 °C.
Key electrical specifications include a typical Drain-Source On-State Resistance of 0.0055 Ω at VGS = -10 V and ID = -15 A, and a typical Gate-Source Threshold Voltage of 1.4 V. The device exhibits typical input capacitance of 4430 pF and total gate charge of 72 nC under specified conditions.
This MOSFET is suitable for various electronic designs requiring P-Channel switching capabilities. Its characteristics are optimized for accurate modeling of gate charge and transient behavior.
The SI7625DN is a surface-mount device, facilitating integration into compact electronic assemblies.
| Qty | Low | High |
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| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical Drain-Source On-State Resistance is 0.0055 Ω at VGS = -10 V and ID = -15 A.
The typical Gate-Source Threshold Voltage is 1.4 V.
The operating temperature range is -55 °C to +125 °C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.