| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,100 pcs
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3100 pcs | On Request | 1 | On Request | On Request | 1603+ | On Request | On Request |
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| Tape & Reel | |
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The SI7623DN-T1-GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale, designed for high-efficiency power management applications. It features a maximum drain-to-source voltage of -20V and a continuous drain current rating of 35A, making it suitable for load switching and battery protection circuits.
Key electrical characteristics include a maximum on-resistance of 3.8mOhm at 20A drain current and 10V gate drive, ensuring low conduction losses. The gate threshold voltage is 1.5V at 250µA, allowing logic-level drive compatibility. The device is housed in a PPAK1212-8 surface-mount package, offering a compact footprint for space-constrained designs.
This MOSFET is ideal for applications requiring high current handling in a small package, such as DC-DC converters, power distribution switches, and motor control circuits. The P-channel configuration simplifies drive circuitry in high-side switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is -20V.
The maximum on-resistance is 3.8mOhm at 20A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 1.5V at 250µA drain current.
The maximum gate-source voltage is ±12V.