SI7619DN-T1-GE3 The Vishay Dale SI7619DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 24A. It features a low on-resistance and is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SI7619DN-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7619DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 24A. It features a low on-resistance and is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 118,545 pcs
$ Price Range: $0.39

SI7619DN-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
90,400 pcs
90400 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
28,020 pcs
28020 pcs On Request 1 On Request On Request On Request On Request On Request
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125 pcs
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SI7619DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7619DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7619DN-T1-GE3 is a P-Channel MOSFET designed for various applications including load, battery, and adaptor switching in notebook PCs. It offers a drain-source voltage of 30V and a maximum continuous drain current of 24A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 0.021 Ohms at 10V gate-source voltage and 0.034 Ohms at 4.5V gate-source voltage. The typical gate charge is 15 nC at 10V Vgs. The device operates within a junction temperature range of -55°C to +150°C.

 

This MOSFET is packaged in a surface-mount PowerPAK 1212-8 package. It is tested for 100% Rg and UIS, and is available in lead-free and halogen-free options.

SI7619DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 30 V (D-S) MOSFET
Subcategory: P-Channel

SI7619DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7619DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.39 $0.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7619DN-T1-GE3 Features

  • P-Channel TrenchFET® power MOSFET.
  • 30V drain-source voltage rating.
  • 24A continuous drain current.
  • Low on-resistance: 0.021 Ohms max.
  • PowerPAK 1212-8 surface-mount package.

SI7619DN-T1-GE3 Applications

  • Notebook PC load switch.
  • Notebook PC battery switch.
  • Notebook PC adaptor switch.

SI7619DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7619DN-T1-GE3?

The drain-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 24A at 25°C case temperature.

What is the maximum on-resistance of the SI7619DN-T1-GE3?

The maximum on-resistance is 0.021 Ohms at 10.5A and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SI7619DN-T1-GE3 in?

The device is in a PowerPAK 1212-8 package.

Is the SI7619DN-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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