SI7617DN-T1-GE3 The Vishay Dale SI7617DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 35A continuous drain current. It is housed in a surface-mount PowerPAK 1212-8 package.
Mfr Part #:

SI7617DN-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7617DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 35A continuous drain current. It is housed in a surface-mount PowerPAK 1212-8 package.
✓ Total Stock: 47,401 pcs
$ Price Range: $0.99

SI7617DN-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7617DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7617DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7617DN-T1-GE3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current of 35A at 25°C case temperature. The on-resistance (Rds On) is as low as 12.3mOhm at 13.9A and 10V gate-source voltage.

 

This MOSFET utilizes TrenchFET technology and is tested for Rg and UIS. It has a gate charge (Qg) of 59nC maximum at 10V and a gate threshold voltage (Vgs(th)) of 2.5V maximum at 250µA. The operating temperature range is from -55°C to 150°C.

 

The device is packaged in a PowerPAK 1212-8, designed for surface mounting. Its maximum power dissipation is rated at 52W when the case temperature is 25°C, and 3.7W when the ambient temperature is 25°C.

 

Applications include notebook battery charging and notebook adapter switching.

SI7617DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7617DN-T1-GE3 P-Channel 30V MOSFET
Subcategory: P-Channel

SI7617DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7617DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7617DN-T1-GE3 Features

  • P-Channel 30V MOSFET
  • 35A continuous drain current
  • Low Rds On: 12.3mOhm at 10V
  • Surface mount PowerPAK 1212-8 package
  • Wide operating temperature range

SI7617DN-T1-GE3 Applications

  • Load switching in portable devices.
  • Power management for battery circuits.
  • DC-DC converter applications.
  • Reverse polarity protection circuits.

SI7617DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7617DN-T1-GE3?

The maximum drain-source voltage (Vds) for the SI7617DN-T1-GE3 is 30V.

What is the continuous drain current rating?

The continuous drain current is rated at 35A when the case temperature is 25°C.

What is the on-resistance (Rds On) of this MOSFET?

The Rds On is a maximum of 12.3mOhm at a drain current of 13.9A and a gate-source voltage of 10V.

What is the package type for the SI7617DN-T1-GE3?

The SI7617DN-T1-GE3 is supplied in a PowerPAK 1212-8 package, which is designed for surface mounting.

What is the operating temperature range?

The operating junction and storage temperature range is from -55°C to 150°C.

Home
Account

Categories