| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
195 pcs
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195 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI7615DN-T1-GE3 is a P-Channel MOSFET designed for both linear and switching applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 35A at 25°C case temperature.
The MOSFET has a low on-state resistance (Rds(on)) of 3.9mΩ at 20A and 10V gate-source voltage. Key electrical characteristics include an input capacitance (Ciss) of 6060 pF and a total gate charge (Qg) of 107 nC.
Packaged in a surface mount PowerPAK® 1212-8, this device operates within a temperature range of -55°C to 150°C (TJ). It is suitable for applications requiring efficient power management and switching.
The device is specified with a gate-source threshold voltage (Vgs(th)) of 0.80V typical at 250µA. The maximum gate-source voltage is ±12V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.
The continuous drain current is 35A.
The package type is PowerPAK® 1212-8.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The typical Drain-Source On-State Resistance is 3.4 mΩ.