| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7615CDN-T1-GE3 is a P-Channel MOSFET designed for various applications. It features a drain-source voltage (Vds) of 20V and a maximum continuous drain current (Id) of 35A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds(on)) of 9mOhm at 12A and 4.5V gate-source voltage. The gate charge (Qg) is typically 42nC, with a maximum of 63nC at 4.5V. The gate threshold voltage (Vgs(th)) is 1V at 250µA.
This MOSFET operates within a junction temperature range of -55°C to +150°C. It is packaged in a PowerPAK 1212-8 surface-mount package. The maximum power dissipation is 33W at 25°C case temperature.
Applications include battery management in mobile devices, battery switches, and load switches.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 20V.
The maximum continuous drain current is 35A at 25°C case temperature.
The Rds(on) is a maximum of 9mOhm at 12A and 4.5V.
This MOSFET is supplied in a PowerPAK 1212-8 package.
The operating junction and storage temperature range is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.