SI7615ADN-T1-GE3 P-Channel MOSFET with 20V drain-source voltage and 35A continuous drain current. Features low on-resistance of 4.4mOhm at 10V drive.
Mfr Part #:

SI7615ADN-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET with 20V drain-source voltage and 35A continuous drain current. Features low on-resistance of 4.4mOhm at 10V drive.
✓ Total Stock: 285,590 pcs
$ Price Range: $0.99

SI7615ADN-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7615ADN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7615ADN-T1-GE3 Description

Short technical summary and product information.

The SI7615ADN-T1-GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale, designed for high-efficiency power management applications. It offers a maximum drain-to-source voltage of 20V and a continuous drain current of 35A at case temperature 25°C.

 

Key electrical characteristics include a low maximum on-resistance of 4.4mOhm at Vgs=10V and Id=20A, and 6mOhm at Vgs=4.5V. The device features a gate threshold voltage of 1.5V maximum and supports drive voltages from 2.5V to 10V. Input capacitance is 5590pF typical at Vds=10V, and total gate charge is 183nC maximum at Vgs=10V.

 

The MOSFET is housed in a PowerPAK 1212-8 surface-mount package and operates over a junction temperature range of -55°C to +150°C. Maximum power dissipation is 52W at case temperature 25°C and 3.7W at ambient temperature 25°C.

SI7615ADN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SI7615ADN-T1-GE3 P-Channel MOSFET
Subcategory: Single MOSFET

SI7615ADN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7615ADN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7615ADN-T1-GE3 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • 35A continuous drain current at 25°C case.
  • Low on-resistance of 4.4mOhm at 10V drive.
  • Surface-mount PowerPAK 1212-8 package.
  • Operating temperature range -55°C to +150°C.

SI7615ADN-T1-GE3 Applications

  • Ideal for load switching in portable devices.
  • Used in DC-DC converter power stages.
  • Suitable for battery protection circuits.
  • Applicable in power management for computing.

SI7615ADN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI7615ADN-T1-GE3?

The maximum drain-to-source voltage is 20V.

What is the continuous drain current rating?

The continuous drain current is 35A at case temperature 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 4.4mOhm at Id=20A and Vgs=10V.

What package is the SI7615ADN-T1-GE3 available in?

It is available in a PowerPAK 1212-8 surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Home
Account

Categories