| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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67 pcs
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67 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The SI7611DN-T1-GE3 from Vishay Siliconix is a P-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 40V and a continuous drain current rating of 18A, with a power dissipation of 39W. The MOSFET exhibits a low on-resistance of 25mOhms at a gate-source voltage of 10V.
This component operates within a temperature range of -50°C to +150°C. It is packaged in a compact POWERPAK 1212-8 surface-mount case, making it suitable for space-constrained designs. The MOSFET utilizes Silicon technology and operates in enhancement mode.
Key electrical characteristics include a gate-source voltage of -10V and a gate charge of 41nC. The SI7611DN-T1-GE3 is manufactured by Vishay Siliconix and belongs to the Si7 series. Its dimensions are 3.3mm in length and width, with a height of 1.04mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The continuous drain current is 18A.
The on-resistance is 25mOhms at a gate-source voltage of 10V.
The power dissipation is 39W.
The operating temperature range is -50°C to +150°C.
This MOSFET is in a POWERPAK 1212-8 surface-mount package.
The RoHS status is RoHS3 Compliant.