| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,722 pcs
|
2722 pcs | On Request | 1 | On Request | On Request | 1610+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7540DP-T1-E3 is a versatile MOSFET featuring both N-channel and P-channel configurations, designed for 12V applications. It offers a continuous drain current of up to 7.6A and a low on-resistance, with typical values such as 0.017Ω at 11.8A and 4.5V Vgs for the N-channel.
This device utilizes TrenchFET Power MOSFET technology and comes in a low-profile PowerPAK SO-8 package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ). It is PWM optimized for high efficiency and is 100% Rg tested.
Key electrical characteristics include a gate threshold voltage of 1.5V at 250µA and a gate charge of 17nC at 4.5V Vgs. The maximum power dissipation is rated at 1.4W. This MOSFET is designed for applications like point-of-load synchronous rectification and synchronous buck converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 12V for both N-channel and P-channel.
The device is available in a PowerPAK SO-8 Dual package.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current for the N-channel is 11.8A at 25°C.
The on-resistance is 17mΩ maximum at VGS=4.5V and ID=11.8A.
The maximum gate threshold voltage is 1.5V at a drain current of 250µA.