SI7540ADP-T1-GE3 The Vishay Dale SI7540ADP-T1-GE3 is a dual N- and P-channel MOSFET featuring a 20V drain-source voltage and a PowerPAK SO-8 Dual package. It offers high current handling capabilities with 12A for N-channel and 9A for P-channel.
Mfr Part #:

SI7540ADP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7540ADP-T1-GE3 is a dual N- and P-channel MOSFET featuring a 20V drain-source voltage and a PowerPAK SO-8 Dual package. It offers high current handling capabilities with 12A for N-channel and 9A for P-channel.
✓ Total Stock: 32,614 pcs
$ Price Range: $0.99

SI7540ADP-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
27,079 pcs
27079 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,515 pcs
1515 pcs On Request 1 On Request On Request On Request On Request On Request

SI7540ADP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Vgs(th) (Max) @ Id

SI7540ADP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7540ADP-T1-GE3 is a versatile MOSFET device integrating both N-channel and P-channel transistors within a single PowerPAK SO-8 Dual package. This configuration is suitable for various DC/DC converter applications, including synchronous buck converters and synchronous rectifiers, as well as load switch and motor drive switch functions.

 

Key electrical characteristics include a drain-source voltage (Vds) of 20V. The on-resistance (Rds On) is specified at a maximum of 28mOhm for the P-channel at 9A and 10V, and 15mOhm for the N-channel at 12A and 4.5V. Gate charge (Qg) is typically 8.5nC for the N-channel and 16nC for the P-channel. The device operates across a wide temperature range from -55°C to 150°C.

 

Designed for surface mounting, the PowerPAK SO-8 Dual package offers thermal enhancement. The continuous drain current is rated at 12A for the N-channel and 9A for the P-channel at 25°C ambient temperature. Pulsed drain current capabilities are up to 35A for N-channel and 25A for P-channel.

 

This MOSFET is designed for applications requiring efficient power management and switching. Its dual-channel nature simplifies circuit design for complementary switching requirements.

SI7540ADP-T1-GE3 Quick Information

Product Type: MOSFET
Series: SI7540
Canonical Name: N- and P-Channel 20 V (D-S) MOSFET
Subcategory: N- and P-Channel

SI7540ADP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7540ADP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7540ADP-T1-GE3 Features

  • Dual N- and P-Channel MOSFET configuration.
  • 20V Drain-to-Source Voltage rating.
  • Low Rds On values for efficient switching.
  • PowerPAK SO-8 Dual package for surface mounting.
  • Wide operating temperature range.

SI7540ADP-T1-GE3 Applications

  • Ideal for DC/DC converters.
  • Suitable for synchronous buck circuits.
  • Used in synchronous rectifier designs.
  • Applicable for load switch functions.
  • Effective for motor drive circuits.

SI7540ADP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the SI7540ADP-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7540ADP-T1-GE3 MOSFET?

The SI7540ADP-T1-GE3 is available in a PowerPAK SO-8 Dual package.

What is the maximum continuous drain current for the N-channel and P-channel in the SI7540ADP-T1-GE3?

The maximum continuous drain current is 12A for the N-channel and 9A for the P-channel at 25°C.

What is the Rds On (Max) for the SI7540ADP-T1-GE3 at specified conditions?

The Rds On (Max) is 28mOhm @ 12A, 10V for the P-channel and 15mOhm @ 12A, 4.5V for the N-channel.

What is the Drain to Source Voltage (Vdss) for the SI7540ADP-T1-GE3?

The Drain to Source Voltage (Vdss) is 20V.

What is the Gate Charge (Qg) typically for the N-channel and P-channel of the SI7540ADP-T1-GE3?

The typical Gate Charge (Qg) is 8.5nC for the N-channel and 16nC for the P-channel.

Home
Account

Categories