| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,267 pcs
|
60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,587 pcs
|
1587 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI7501DN-T1-E3 is a dual N-channel and P-channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current rating of 5.4A for the N-channel and 4.5A for the P-channel. The MOSFET features a low on-resistance of 35mOhm at 7.7A and 10V, and a gate charge (Qg) of 14nC at 10V.
The device utilizes MOSFET technology and has a logic level gate feature. It is packaged in a PowerPAK® 1212-8 Dual configuration, suitable for surface mounting. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, and it has a power dissipation of 1.6W.
This component is RoHS3 compliant and has an MSL rating of 1 Unlimited. Its configuration as N and P-channel with a common drain makes it versatile for power management and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
PowerPAK 1212-8 Dual
It is a dual N and P channel common drain configuration.
3V at a gate current of 250 microamperes.
The maximum power dissipation rating is 1.6 watts.