SI7489DP-T1-E3 The Si7489DP-T1-E3 is a P-Channel power MOSFET rated for 100V drain-source voltage and 28A continuous drain current. It features a low on-resistance of 41mΩ and operates within a junction temperature range of -55°C to 150°C.
Mfr Part #:

SI7489DP-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Si7489DP-T1-E3 is a P-Channel power MOSFET rated for 100V drain-source voltage and 28A continuous drain current. It features a low on-resistance of 41mΩ and operates within a junction temperature range of -55°C to 150°C.
✓ Total Stock: 69,112 pcs
$ Price Range: $0.99

SI7489DP-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7489DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

SI7489DP-T1-E3 Description

Short technical summary and product information.

The Si7489DP-T1-E3 is a P-Channel power MOSFET manufactured by Vishay Dale under the Siliconix brand. Designed for efficient power switching applications, this device delivers a maximum drain-source voltage of 100V and supports up to 28A of continuous drain current at case temperature. Its low on-resistance of 41mΩ at a gate drive of 10V minimizes conduction losses, while the gate threshold voltage ranges from -1V to -3V for reliable logic-level control.

 

Thermal performance is optimized for compact designs, with a maximum junction-to-case thermal resistance of 1.5°C/W and a peak power dissipation of 83W when mounted to a heatsink. The component operates reliably across an extended temperature range of -55°C to 150°C. It is housed in a leadless PowerPAK SO-8 surface-mount package, which reduces footprint and improves thermal transfer compared to traditional plastic packages. The exposed copper terminals facilitate direct soldering to PCB ground planes.

 

This MOSFET is suitable for DC-DC converters, motor drivers, and load switch circuits where space constraints and thermal efficiency are critical. It complies with halogen-free standards and utilizes TrenchFET technology for enhanced switching characteristics.

SI7489DP-T1-E3 Quick Information

Product Type: Power MOSFET
Canonical Name: Si7489DP-T1-E3 P-Channel Power MOSFET
Subcategory: P-Channel Power MOSFET

SI7489DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7489DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7489DP-T1-E3 Features

  • Rated for 100V drain-source voltage operation.
  • Supports 28A continuous drain current at case temp.
  • Low 41mΩ on-resistance minimizes conduction loss.
  • Operates reliably from -55°C to 150°C junction temp.
  • Compact leadless PowerPAK SO-8 surface mount package.

SI7489DP-T1-E3 Applications

  • Used in DC-DC buck and boost converter designs.
  • Ideal for motor driver bridge configurations.
  • Suitable for battery protection and load switches.
  • Effective in automotive power distribution modules.

SI7489DP-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating?

100 V

What package type does this component use?

PowerPAK SO-8 surface mount

What is the operating junction temperature range?

-55°C to 150°C

What is the maximum continuous drain current?

28 A at case temperature

What is the typical gate charge?

54 nC at 10 V

What is the maximum gate-source voltage rating?

±20 V

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