SI7485DP-T1-E3 The Vishay Dale SI7485DP-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 12.5A continuous drain current. It is designed for surface mounting in a PowerPAK SO-8 package.
Mfr Part #:

SI7485DP-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7485DP-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 12.5A continuous drain current. It is designed for surface mounting in a PowerPAK SO-8 package.
✓ Total Stock: 51,657 pcs
$ Price Range: $0.99

SI7485DP-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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51,657 pcs
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SI7485DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI7485DP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7485DP-T1-E3 is a P-Channel MOSFET belonging to the TrenchFET® series. It offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 12.5A at 25°C. The MOSFET features a low on-resistance (Rds On) of 7.3mOhm at 20A and 4.5V, with a gate threshold voltage (Vgs(th)) of 900mV at 1mA. The gate charge (Qg) is a maximum of 150nC at 5V.

 

This component is designed for surface mounting and comes in a PowerPAK® SO-8 package. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is rated at 1.8W (Ta). The MOSFET technology utilizes Metal Oxide Semiconductor Field-Effect Transistor principles.

 

Key electrical characteristics include a maximum power dissipation of 1.8W and a continuous drain current of 12.5A. The low on-resistance is beneficial for efficient power switching applications. The P-Channel configuration makes it suitable for specific circuit designs where a high-side switch or load switch is required.

SI7485DP-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: Vishay Dale SI7485DP-T1-E3 P-Channel MOSFET
Subcategory: P-Channel

SI7485DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7485DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7485DP-T1-E3 Features

  • P-Channel MOSFET technology
  • 20V drain-source voltage rating
  • 12.5A continuous drain current
  • Low 7.3mOhm on-resistance
  • Surface mount PowerPAK SO-8 package

SI7485DP-T1-E3 Applications

  • Suitable for power switching circuits
  • Ideal for load switch applications
  • Used in high-side switching designs
  • Efficient power management solutions

SI7485DP-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the SI7485DP-T1-E3?

The drain-to-source voltage (Vdss) for the SI7485DP-T1-E3 is 20V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 12.5A.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance (Rds On) is 7.3mOhm at 20A and 4.5V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI7485DP-T1-E3 in?

The SI7485DP-T1-E3 is in a PowerPAK® SO-8 package.

How is the SI7485DP-T1-E3 mounted?

It is designed for surface mounting.

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