SI7483ADP-T1-GE3 The Vishay Dale SI7483ADP-T1-GE3 is a P-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 14A.
Mfr Part #:

SI7483ADP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7483ADP-T1-GE3 is a P-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 14A.
✓ Total Stock: 30,133 pcs
$ Price Range: $0.99

SI7483ADP-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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30,133 pcs
30133 pcs On Request 1 On Request On Request On Request On Request On Request

SI7483ADP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7483ADP-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI7483ADP-T1-GE3 is a P-Channel MOSFET with a drain-source voltage rating of 30V and a continuous drain current capability of 14A at 25°C ambient temperature. It offers a low maximum on-resistance of 5.7mOhm at 24A and 10V gate-source voltage.

 

The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a gate charge of 180 nC at 10V. The gate threshold voltage is a maximum of 3V at 250µA, and the maximum gate-to-source voltage is ±20V.

 

Packaged in a PowerPAK® SO-8 for surface mounting, this component is suitable for various power management applications. Its maximum power dissipation is rated at 1.9W (Ta).

 

The device is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, though these compliance statuses are unverified.

SI7483ADP-T1-GE3 Quick Information

Product Type: MOSFET
Series: SI7483ADP-T1-GE3
Canonical Name: Vishay Dale SI7483ADP-T1-GE3 P-Channel MOSFET
Subcategory: Single

SI7483ADP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7483ADP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7483ADP-T1-GE3 Features

  • P-Channel MOSFET technology.
  • 30V drain-to-source voltage rating.
  • 14A continuous drain current.
  • Low 5.7mOhm maximum on-resistance.
  • Surface mount PowerPAK SO-8 package.

SI7483ADP-T1-GE3 Applications

  • Suitable for power switching applications.
  • Used in battery management circuits.
  • Ideal for load switch designs.
  • Applicable in power distribution modules.

SI7483ADP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

30 V

What package type does this component use?

PowerPAK SO-8

What is the operating junction temperature range?

-55°C to 150°C

What is the maximum on-resistance at a 10V gate drive?

5.7 mΩ

What is the maximum gate charge for this MOSFET?

180 nC at 10V

What is the continuous drain current rating at 25°C?

14 A

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