| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,160 pcs
|
36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
232 pcs
|
232 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7483ADP-T1-E3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power management applications, featuring a low on-resistance of 5.7 mOhm at 10V gate drive. The device is rated for a drain-source voltage of 30V and a continuous drain current of 14A at 25°C ambient temperature.
Key electrical characteristics include a maximum gate charge of 180 nC at 10V, ensuring fast switching performance. The threshold voltage is 3V maximum at 250µA drain current. The device can operate over a junction temperature range of -55°C to 150°C, making it suitable for harsh environments.
Packaged in the Vishay PowerPAK SO-8, this MOSFET offers a compact footprint for space-constrained designs. The surface mount package is optimized for thermal performance and low parasitic inductance. Typical applications include load switching, battery protection, and power distribution in portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAK SO-8 surface mount package.
-55°C to 150°C junction temperature.
5.7mOhm at 24A drain current and 10V gate-source voltage.
180nC at 10V gate-source voltage.
±20V.
3V maximum at 250µA drain current.