SI7478DP-T1-GE3 The Vishay Dale SI7478DP-T1-GE3 is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and a continuous current rating of 15A.
Mfr Part #:

SI7478DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7478DP-T1-GE3 is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and a continuous current rating of 15A.
✓ Total Stock: 9,959 pcs
$ Price Range: $0.99

SI7478DP-T1-GE3 Available from 2 distributors

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✓ Non-Authorised
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5,826 pcs
5826 pcs On Request 1 On Request On Request 18+ On Request On Request
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4,133 pcs
4133 pcs On Request 1 On Request On Request On Request On Request On Request

SI7478DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7478DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7478DP-T1-GE3 is an N-Channel MOSFET belonging to the TrenchFET Power MOSFET family. It features a 60V drain-source voltage and a continuous drain current capability of 15A at 25°C ambient temperature. The device exhibits a low on-state resistance of 7.5mΩ at 20A drain current and 10V gate-source voltage.

 

Designed for surface mounting, this MOSFET comes in a PowerPAK® SO-8 package, offering a low profile and efficient thermal performance. Its operating temperature range is -55°C to 150°C. The device is suitable for various power switching and amplification applications where high efficiency and compact size are critical.

 

Key electrical characteristics include a gate threshold voltage of 3V at 250µA and a maximum gate-source voltage of ±20V. The gate charge is rated at 160nC at 10V. The maximum power dissipation is 1.9W at 25°C ambient temperature.

SI7478DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7478DP-T1-GE3 N-Channel 60V PowerPAK SO-8 MOSFET
Subcategory: Single

SI7478DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7478DP-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7478DP-T1-GE3 Features

  • 60V drain-source voltage rating.
  • 15A continuous drain current.
  • Low 7.5mOhm Rds On.
  • PowerPAK SO-8 surface mount package.
  • Wide -55°C to 150°C operating temperature.

SI7478DP-T1-GE3 Applications

  • Efficient power switching applications.
  • High-side load switching.
  • DC-DC converters.
  • Power management circuits.

SI7478DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7478DP-T1-GE3?

The drain-source voltage (Vds) is 60 V.

What is the maximum continuous drain current for this MOSFET?

The continuous drain current is 15A at 25°C ambient temperature.

What is the on-state resistance (Rds On) of the SI7478DP-T1-GE3?

The Rds On is a maximum of 7.5mΩ at 20A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI7478DP-T1-GE3 in?

It is in a PowerPAK® SO-8 package.

Is the SI7478DP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Does this MOSFET support halogen-free requirements?

Yes, it is Halogen-free.

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