| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,667 pcs
|
37667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7478DP-T1-E3 is an N-Channel enhancement mode power MOSFET manufactured by Vishay Dale using proprietary TrenchFET technology. Designed for high-efficiency switching applications, this device provides a maximum drain-source voltage of 60V and supports a continuous drain current of 15A at 70°C ambient temperature. The component achieves a typical on-state resistance of 7.5mΩ at a gate drive of 10V, minimizing conduction losses in power circuits.
Thermal performance is optimized through a low-profile PowerPAK SO-8 package with a junction-to-case thermal resistance of just 1.0°C/W. This leadless surface-mount design facilitates efficient heat dissipation while conserving printed circuit board real estate. The device operates reliably across a wide temperature range from -55°C to 150°C junction temperature. With a maximum power dissipation of 1.9W at 70°C and a pulsed drain current capability of 60A, the SI7478DP-T1-E3 is well-suited for DC-DC converters, motor control, and load switch applications requiring robust performance in a compact footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V
15 A
7.5 mΩ
PowerPAK SO-8
Yes, available halogen-free according to IEC 61249-2-21.
-55°C to 150°C