| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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51,657 pcs
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51657 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Vishay Siliconix Si7478DP is an N-Channel Vertical DMOS MOSFET. This component is designed for versatility, suitable for both linear and switching applications. It features a drain-source voltage rating of 60V.
The device operates accurately across a wide temperature range of -55 °C to +125 °C. Key electrical characteristics include a typical gate threshold voltage of 1.8V and a low drain-source on-state resistance, measuring 0.006 Ω at 10V gate drive and 20A current. The MOSFET also exhibits fast switching capabilities, with turn-on delay times around 25-32 ns and fall times around 45-53 ns.
This SPICE model describes typical electrical characteristics, optimized for gate charge, transient, and diode reverse recovery. Designers should refer to the official datasheet for guaranteed specification limits. The model is designed to avoid convergence difficulties while accurately representing device behavior.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 60V.
The typical gate threshold voltage is 1.8V.
The typical on-state resistance is 0.006 Ω at VGS = 10V and ID = 20A.
The operating temperature range is -55 °C to +125 °C.
The typical total gate charge is 105 nC.
The typical turn-on delay time is 32 ns.
The typical fall time is 53 ns.