Si7478DP The Vishay Siliconix Si7478DP is an N-Channel MOSFET designed for both linear and switching applications. It offers a 60V drain-source voltage rating and optimized electrical characteristics.
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Si7478DP

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix Si7478DP is an N-Channel MOSFET designed for both linear and switching applications. It offers a 60V drain-source voltage rating and optimized electrical characteristics.
✓ Total Stock: 51,657 pcs
$ Price Range: $2.81

Si7478DP Available from 1 distributor

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✓ Non-Authorised
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Si7478DP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Operating Temperature
SVHC Present

Si7478DP Description

Short technical summary and product information.

The Vishay Siliconix Si7478DP is an N-Channel Vertical DMOS MOSFET. This component is designed for versatility, suitable for both linear and switching applications. It features a drain-source voltage rating of 60V.

 

The device operates accurately across a wide temperature range of -55 °C to +125 °C. Key electrical characteristics include a typical gate threshold voltage of 1.8V and a low drain-source on-state resistance, measuring 0.006 Ω at 10V gate drive and 20A current. The MOSFET also exhibits fast switching capabilities, with turn-on delay times around 25-32 ns and fall times around 45-53 ns.

 

This SPICE model describes typical electrical characteristics, optimized for gate charge, transient, and diode reverse recovery. Designers should refer to the official datasheet for guaranteed specification limits. The model is designed to avoid convergence difficulties while accurately representing device behavior.

Si7478DP Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Si7478DP N-Channel 60 V MOSFET
Subcategory: N-Channel

Si7478DP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

Si7478DP Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

Si7478DP Features

  • N-Channel Vertical DMOS MOSFET
  • 60V Drain-Source Voltage Rating
  • Wide -55C to +125C Operating Temp
  • Low On-State Resistance
  • Fast Switching Characteristics

Si7478DP Applications

  • Suitable for linear applications
  • Designed for switching applications
  • Optimized for SPICE modeling
  • Accurate over wide temperature range

Si7478DP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the Si7478DP MOSFET?

The drain-source voltage rating is 60V.

What is the typical gate threshold voltage (Vgs(th)) for the Si7478DP?

The typical gate threshold voltage is 1.8V.

What is the typical on-state resistance (Rds(on)) at VGS = 10V?

The typical on-state resistance is 0.006 Ω at VGS = 10V and ID = 20A.

What is the operating temperature range for the Si7478DP?

The operating temperature range is -55 °C to +125 °C.

What is the typical total gate charge (Qg) for the Si7478DP?

The typical total gate charge is 105 nC.

What is the typical turn-on delay time (td(on))?

The typical turn-on delay time is 32 ns.

What is the typical fall time (tf)?

The typical fall time is 53 ns.

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