SI7469DP-T1-GE3 P-Channel MOSFET with -80V drain-source breakdown voltage, 28A continuous drain current, and 25mOhm on-resistance in a PowerPAK SO-8 package.
Mfr Part #:

SI7469DP-T1-GE3

Available from 6 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET with -80V drain-source breakdown voltage, 28A continuous drain current, and 25mOhm on-resistance in a PowerPAK SO-8 package.
✓ Total Stock: 32,098 pcs
$ Price Range: $0.99

SI7469DP-T1-GE3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI7469DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7469DP-T1-GE3 Description

Short technical summary and product information.

The SI7469DP-T1-GE3 is a P-Channel MOSFET from Vishay Dale designed for high-efficiency power management. It features a drain-source breakdown voltage of -80V and a continuous drain current of 28A at case temperature 25°C. The on-resistance is typically 25mOhm at 10V gate drive, enabling low conduction losses.

 

This MOSFET is housed in a PowerPAK SO-8 package, which offers excellent thermal performance with a junction-to-case thermal resistance of 1.5°C/W. The device can operate over a junction temperature range of -55°C to 150°C, making it suitable for demanding environments.

 

Typical applications include load switching, battery protection, and power supply circuits where P-Channel devices simplify drive circuitry. The part is halogen-free and surface-mountable for automated assembly.

SI7469DP-T1-GE3 Quick Information

Subcategory: P-Channel MOSFET

SI7469DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7469DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7469DP-T1-GE3 Features

  • P-Channel MOSFET with -80V drain-source breakdown.
  • 28A continuous drain current at 25°C case.
  • 25mOhm maximum on-resistance at 10V gate drive.
  • PowerPAK SO-8 package for efficient thermal management.
  • Halogen-free and RoHS3 compliant (unverified).

SI7469DP-T1-GE3 Applications

  • High-side load switching in power supplies.
  • Battery protection circuits in portable devices.
  • Power management in industrial and automotive systems.
  • DC-DC converter and inverter applications.

SI7469DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

-80V minimum.

What is the continuous drain current?

28A at case temperature 25°C.

What is the on-resistance?

25mOhm maximum at 10.2A drain current and 10V gate drive.

What is the gate threshold voltage?

3V maximum at 250µA drain current.

What is the operating temperature range?

-55°C to 150°C.

What is the package type?

PowerPAK SO-8.

Is this MOSFET halogen-free?

Yes, the SI7469DP-T1-GE3 is halogen-free as per the datasheet.

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