| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10,369 pcs
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10369 pcs | On Request | 1 | On Request | On Request | 1337+ | On Request | On Request | |
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8,932 pcs
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8932 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,415 pcs
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1415 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,076 pcs
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1076 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7469DP-T1-E3 is a P-Channel Power MOSFET designed for various applications requiring efficient switching. It features a drain-source breakdown voltage of 80V and a low on-resistance of 25mOhm at a gate-source voltage of 10V and a drain current of 10.2A. The device can handle a continuous drain current of up to 28A at case temperature and 10.2A at ambient temperature.
This MOSFET operates within a junction temperature range of -55°C to 150°C and has a typical gate charge of 55nC. It is packaged in a PowerPAK SO-8 surface mount package, suitable for space-constrained designs. The device offers a maximum power dissipation of 5.2W at ambient temperature and 83.3W at case temperature, with a junction-to-ambient thermal resistance of 24°C/W.
The SI7469DP-T1-E3 is specified as RoHS3 Compliant and Halogen-free, making it suitable for environmentally conscious designs. Its robust construction and electrical characteristics make it a reliable choice for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -80V.
The maximum gate-source voltage is ±20V.
The on-resistance is a maximum of 25mOhm at a drain current of 10.2A and a gate-source voltage of 10V.
The continuous drain current is 28A at 25°C case temperature and 10.2A at 25°C ambient temperature.
The operating junction and storage temperature range is -55°C to 150°C.
It is in a PowerPAK SO-8 surface mount package.