| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SI7469ADP-T1-RE3 is a P-Channel power MOSFET designed for various applications including adapter and charger switches, battery and circuit protection, and load switch functions. It features TrenchFET® Gen IV technology, offering very low R DS(on) to minimize voltage drop and reduce conduction loss.
Key electrical specifications include a drain-source voltage (VDS) of 80V and a maximum continuous drain current (ID) of 46A at 25°C case temperature. The on-resistance (RDS(on)) is as low as 19.3mOhm at 10A and 10V gate-source voltage. The device also has a gate charge (Qg) of 65nC typical at 10V and an input capacitance (Ciss) of 3420pF typical at 40V.
This MOSFET operates within a junction temperature range of -55°C to 150°C. It is packaged in a PowerPAK® SO-8 surface-mount package, suitable for space-constrained designs. The device is rated for 100% R g and UIS testing, ensuring reliability.
Applications include adapter and charger switches, battery and circuit protection, load switches, and motor drive control. The P-Channel MOSFET configuration and high current handling capabilities make it suitable for power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V
PowerPAK SO-8 surface mount
-55°C to 150°C
46 A at a 25°C case temperature
19.3 mOhm at 10V gate drive
It contains a single channel configuration