SI7465DP-T1-GE3 The Vishay SI7465DP-T1-GE3 is a P-Channel MOSFET with a 60V drain-source voltage and 3.2A continuous drain current. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7465DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay SI7465DP-T1-GE3 is a P-Channel MOSFET with a 60V drain-source voltage and 3.2A continuous drain current. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 77,234 pcs
$ Price Range: $0.99

SI7465DP-T1-GE3 Available from 5 distributors

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SI7465DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Height
Length
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Width

SI7465DP-T1-GE3 Description

Short technical summary and product information.

The Vishay SI7465DP-T1-GE3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 3.2A at ambient temperature.

 

The MOSFET has a low on-resistance of 64mOhm at a gate-source voltage of 10V and a drain current of 5A. The gate charge is 40nC at 10V, and the gate-source threshold voltage is 3V at 250µA.

 

This device operates within a temperature range of -55°C to 150°C. It is packaged in a PowerPAK SO-8 surface-mount package, offering a low profile of 1.07mm. The PowerPAK SO-8 package is suitable for automated assembly processes.

 

Key electrical characteristics include a maximum power dissipation of 1.5W at ambient temperature. The technology used is MOSFET (Metal Oxide).

SI7465DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay SI7465DP-T1-GE3 P-Channel 60V MOSFET
Subcategory: P-Channel

SI7465DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7465DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7465DP-T1-GE3 Features

  • P-Channel 60V MOSFET.
  • 3.2A continuous drain current.
  • 64mOhm maximum Rds On.
  • PowerPAK SO-8 package.
  • Wide operating temperature range.

SI7465DP-T1-GE3 Applications

  • Suitable for power switching.
  • Ideal for general purpose applications.
  • Used in power management circuits.
  • Efficient for low voltage applications.

SI7465DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SI7465DP-T1-GE3?

The drain-source voltage is 60V.

What is the continuous drain current for the SI7465DP-T1-GE3?

The continuous drain current is 3.2A.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 64mOhm at 5A drain current and 10V gate-source voltage.

What is the operating temperature range for the SI7465DP-T1-GE3?

The operating temperature range is -55°C to 150°C.

What package type is the SI7465DP-T1-GE3 MOSFET supplied in?

It is supplied in a PowerPAK SO-8 package.

Is the SI7465DP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The MSL is 1.

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