SI7465DP-T1-E3 The Vishay Dale SI7465DP-T1-E3 is a P-Channel MOSFET with a 60V Drain-Source Voltage and 3.2A continuous drain current. It is housed in a Surface Mount PowerPAK SO-8 package.
Mfr Part #:

SI7465DP-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7465DP-T1-E3 is a P-Channel MOSFET with a 60V Drain-Source Voltage and 3.2A continuous drain current. It is housed in a Surface Mount PowerPAK SO-8 package.
✓ Total Stock: 38,287 pcs
$ Price Range: $0.99

SI7465DP-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7465DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7465DP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7465DP-T1-E3 is a P-Channel MOSFET designed for power applications. It features a maximum Drain-Source Voltage (Vds) of 60V and a continuous drain current of 3.2A at 25°C ambient temperature. The Rds On is specified at a maximum of 64mOhm when driven at 10V with 5A.

 

This MOSFET utilizes TrenchFET technology and comes in a low-profile PowerPAK SO-8 package, suitable for surface mounting. It operates across a wide temperature range from -55°C to 150°C. The gate charge is 40 nC at 10V, and the gate-source threshold voltage is 3V at 250µA.

 

With a maximum power dissipation of 1.5W (Ta=25°C), the SI7465DP-T1-E3 is designed for efficient power management in various electronic circuits. Its specifications make it suitable for applications requiring reliable switching and power control.

SI7465DP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7465DP-T1-E3 P-Channel 60V MOSFET
Subcategory: P-Channel

SI7465DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7465DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7465DP-T1-E3 Features

  • P-Channel 60V MOSFET.
  • 3.2A continuous drain current.
  • Low Rds On of 64mOhm.
  • Surface mount PowerPAK SO-8 package.
  • Wide operating temperature range.

SI7465DP-T1-E3 Applications

  • Used in power management circuits.
  • Ideal for load switching applications.
  • Suitable for DC-DC converters.
  • Common in battery protection systems.

SI7465DP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What is the continuous drain current?

3.2A typical at 25°C ambient, maximum 5A.

What is the on-resistance?

64mOhm maximum at 10V gate drive and 5A drain current.

What is the gate charge?

40nC maximum at 10V gate-source voltage.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is it available in?

PowerPAK SO-8 surface-mount package.

What is the gate threshold voltage?

3V maximum at 250µA drain current.

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