| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The SI7464DP-T1-E3 is an N-Channel fast switching power MOSFET designed for primary side switch applications in power supply circuits. Utilizing Vishay's TrenchFET technology, this device delivers optimized PWM performance with low thermal resistance. The component features a maximum drain-source voltage of 200V and a continuous drain current of 1.8A at 25°C ambient temperature, rising to 2.8A at a 150°C junction temperature.
Engineered for efficiency, the MOSFET exhibits a typical gate charge of 12nC and a maximum on-state resistance of 0.24Ω at VGS = 10V. It is housed in a leadless PowerPAK SO-8 surface mount package with a low 1.07mm profile, facilitating automated assembly and reduced board space requirements. The exposed copper terminals require careful soldering profiles, as manual rework with a soldering iron is not recommended.
Thermal management is supported by a steady-state junction-to-case thermal resistance of up to 3.5°C/W. The device operates within a wide temperature range of -55°C to +150°C, making it suitable for demanding industrial and consumer electronics environments where reliable high-frequency switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200 V
PowerPAK SO-8 surface mount package
-55 °C to +150 °C
12 nC at 10 V gate-source voltage
No, manual soldering with a soldering iron is not recommended for this leadless package